skm600ga12t4 ? by semikron rev. 4 C 03.09.2013 1 semitrans ? 4 ga fast igbt4 modulesskm600ga12t4 features igbt4 = 4. generation fast trench igbt (infineon) cal4 = soft switching 4. generation cal-diode isolated copper baseplate using dbc technology (direct bonded copper) increased power cycling capability with integrated gate resistor for higher switching frequenzies up to 20khz ul recognized, file no. e63532 typical applications* ac inverter drives ups switched reluctance motor remarks case temperature limited to t c = 125c max. recommended t op = -40 ... +150c product reliability results valid for t j = 150c absolute maximum ratings symbol conditions values unit igbtv ces t j =25c 1200 v i c t j = 175 c t c =25c 913 a t c =80c 702 a i cnom 600 a i crm i crm = 3xi cnom 1800 a v ges -20 ... 20 v t psc v cc = 800 v v ge 15 v v ces 1200 v t j =150c 10 s t j -40 ... 175 c inverse diode i f t j = 175 c t c =25c 707 a t c =80c 529 a i fnom 600 a i frm i frm = 3xi fnom 1800 a i fsm t p = 10 ms, sin 180, t j =25c 3240 a t j -40 ... 175 c module i t(rms) t terminal =80c 500 a t stg -40 ... 125 c v isol ac sinus 50 hz, t = 1 min 4000 v characteristics symbol conditions min. typ. max. unit igbtv ce(sat) i c =600a v ge =15v chiplevel t j =25c 1.80 2.05 v t j =150c 2.20 2.40 v v ce0 chiplevel t j =25c 0.8 0.9 v t j =150c 0.7 0.8 v r ce v ge =15v chiplevel t j =25c 1.67 1.92 m ? t j =150c 2.50 2.67 m ? v ge(th) v ge =v ce , i c =24ma 5 5.8 6.5 v i ces v ge =0v v ce = 1200 v t j =25c 5m a t j =150c ma c ies v ce =25v v ge =0v f=1mhz 37.2 nf c oes f=1mhz 2.32 nf c res f=1mhz 2.04 nf q g v ge = - 8 v...+ 15 v 3400 nc r gint t j =25c 1.3 ? t d(on) v cc = 600 v i c =600a v ge =15v r g on =2 ? r g off =2 ? di/dt on = 6000 a/s di/dt off =5200a/s t j =150c 177 ns t r t j =150c 90 ns e on t j =150c 74 mj t d(off) t j =150c 600 ns t f t j =150c 100 ns e off t j =150c 63 mj r th(j-c) per igbt 0.049 k/w
skm600ga12t4 2 rev. 4 C 03.09.2013 ? by semikron characteristics symbol conditions min. typ. max. unit inverse diode v f = v ec i f = 600 a v ge =0v chiplevel t j =25c 2.14 2.46 v t j =150c 2.07 2.38 v v f0 chiplevel t j =25c 1.3 1.5 v t j =150c 0.9 1.1 v r f chiplevel t j =25c 1.4 1.6 m ? t j =150c 1.9 2.1 m ? i rrm i f = 600 a di/dt off =5500a/s v ge =15v v cc = 600 v t j =150c 420 a q rr t j =150c 92 c e rr t j =150c 38 mj r th(j-c) per diode 0.086 k/w module l ce 15 20 nh r cc'+ee' terminal-chip t c =25c 0.18 m ? t c =125c 0.22 m ? r th(c-s) per module 0.02 0.038 k/w m s to heat sink m6 3 5 nm m t to terminals m6 2.5 5 nm m4 1.1 2 nm w 330 g semitrans ? 4 ga fast igbt4 modulesskm600ga12t4 features igbt4 = 4. generation fast trench igbt (infineon) cal4 = soft switching 4. generation cal-diode isolated copper baseplate using dbc technology (direct bonded copper) increased power cycling capability with integrated gate resistor for higher switching frequenzies up to 20khz ul recognized, file no. e63532 typical applications* ac inverter drives ups switched reluctance motor remarks case temperature limited to t c = 125c max. recommended t op = -40 ... +150c product reliability results valid for t j = 150c
skm600ga12t4 ? by semikron rev. 4 C 03.09.2013 3 fig. 1: typ. output characteristic, inclusive r cc'+ ee' fig. 2: rated current vs. temperature i c = f (t c ) fig. 3: typ. turn-on /-off energy = f (i c ) fig. 4: typ. turn-on /-off energy = f (r g ) fig. 5: typ. transfer characteristic fig. 6: typ. gate charge characteristic
skm600ga12t4 4 rev. 4 C 03.09.2013 ? by semikron fig. 7: typ. switching times vs. i c fig. 8: typ. switching ti mes vs. gate resistor r g fig. 9: transient thermal impedance fig. 10: typ. cal diode forward charact., incl. r cc'+ ee' fig. 11: cal diode peak reverse recovery current fig. 12: typ. cal diode peak reverse recovery charge
skm600ga12t4 ? by semikron rev. 4 C 03.09.2013 5 this is an electrostatic discharge sensitive device (esds), international standard iec 60747-1, chapter ix * the specifications of our components may no t be considered as an assurance of component characteristics. components have to b e tested for the respective application. adjustments may be necessary. the use of semikron produc ts in life support appliances and syste ms is subject to prior specification and written approval by semikron. we therefore strongly recommend prior consultation of our staf f. semitrans 4 ga
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